Toshiba Unveils 3D Memory Cell Upgrade for NAND

Thinking outside the box quite a bit, Toshiba have come up with a memory cell structure that could vastly improve the capabilities of NAND flash memory without sacrificing time or effort.

Today’s memory cell arrays are building blocks of storage capacity, but advances in technology require more and more blocks to be built on top of existing ones, meaning that the NAND string will eventually become too big for its britches, so to speak. Toshiba’s innovation is a three-dimensional array that features shared peripheral circuits that bind a stack of electrode materials.

Such structures are proof for those who hold out hope that new technology enable improvements in flash memory capacity will be able to continue for many, many years, getting better and denser all the time.