Samsung has developed a new ultra-fast, super-duper, extra-big 1Gb OneNAND Flash memory device for future use in cellphones. The OneNAND device combines the high-speed data read function of NOR flash (108MBps read and 10MBps write speeds), and the advanced data storage of NAND flash (1 Gb).
Basically, this will allow for continuous multi-shot captures in future 5.0 megapixel camera phones and real-time VGA video recording, this is a big step up from the current memory limitations of camera phones. No exact date of release was announced, but a 5.0 megapixel camera phone by Samsung is already out, so it could be sooner than we expect.
See press release below.
Samsung Announces Ultra-Fast 1-Gigabit OneNAND Flash Memory for Next-Generation Mobile Phone Market
Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, today announced the successful development of a 1Gigabit (Gb) OneNAND Flash memory device utilizing Samsung’s advanced 90nm process technology. By introducing this high density OneNAND Flash memory device, Samsung expands its diverse portfolio of flash technology to fully support the advanced multimedia features associated with next generation handsets and other mobile applications.
Samsung’s OneNAND device, providing a new Unified Storage concept, combines the high-speed data read function of NOR flash and the advanced data storage of NAND flash. The single chip is based on NAND architecture integrating buffer memory and logic interface.
Featuring a 66MHz synchronous interface and cache read function that enable an enhanced read performance of 108MBytes per second (MBps), the 1Gb OneNAND Flash boasts a four-fold read speed increase over conventional NAND Flash performance. Its faster read speeds resolves the delay time in copying the boot code from the NAND Flash to the DRAM and executing applications on-demand.
Today, a continuous multi-shot capability is limited to the DRAM buffer size. The 1Gb OneNAND delivers 10MBps of write speed, enabling direct write into the total Flash memory space without the need for DRAM buffering. This provides continuous, multi-shot capturing of 5-Megapixel images and real-time recording of VGA resolution video.
The OneNAND device also supports enhanced security features. An OTP block has been integrated into its design to prevent forgery. In addition, a lock function for the memory block unit is available to protect the operating system from viruses.
Samsung’s OneNAND Flash solution is available separately or can be mounted together with a mobile SDRAM in an MCP to effectively execute the key operations on feature intensive next-generation mobile phones. Placing two 1Gb OneNAND Flash and one mobile SDRAM in a 3chip MCP, can satisfy the high performance, multimedia memory requirements of 3G mobile handsets.
Samsung’s complementary Flash software solution includes a selection of operating software, an interface to RTOS file systems, all respective device drivers, and software development tools that further facilitate the application of OneNAND to mobile handsets.
Since initial market introduction in 2003, Samsung’s OneNAND Flash technology is now adopted by more than 10 leading set designers in over 20 advanced mobile applications covering a broad field of mobile handsets, PDA, DSC, DTV, game consoles, and navigator systems.
Samsung will show its 1Gb OneNAND Flash and MCP-based mobile memory solutions at the Electronica 2004 Conference in Munich, Germany, November 9-12. Samsung’s booth number is A4 107 in Hall A4 at the New Munich Trade Fair Centre.
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